Gallium phosphide has been used in the accomplish of bargain red, orange, and blooming
light-emitting diodes (LEDs) with low to average accuracy back the 1960s. It
has a almost abbreviate activity at college accepted and its lifetime is acute
to temperature. It is used standalone or calm with gallium arsenide phosphide.
Pure
GaP LEDs afford blooming ablaze at a amicableness of 555 nm. Nitrogen-doped GaP
emits yellow-green light, zinc oxide benumbed GaP emits red (700 nm).
Gallium
phosphide is cellophane for chicken and red light, accordingly GaAsP-on-GaP
LEDs are added able than GaAsP-on-GaAs.
At
temperatures aloft ~900 °C, gallium phosphide dissociates and the phosphorus
escapes as a gas. In clear advance from a 1500 °C cook (for LED wafers), this
have to be prevented by captivation the phosphorus in with a absolute of
aqueous boric oxide in apathetic gas burden of 10-100 atmospheres. The action
is alleged Liquid Encapsulated Czochralski (LEC) growth, an addition of the
Czochralski action used for silicon wafers.
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